We have performed in situ ballistic-electron-emission microscopy (BEEM) and spectroscopy (BEES) at 77 K on epitaxial CoSi2/Si(111) films grown by molecular bearn epitaxy. The transport in the silicide was found to be essentially ballistic. With the help of atomic-resolution scanning tunneling microscopy it has been found that the BEEM current depends significantly on the surface electronic structure. On strain-relaxed layers, hot electron scattering at individual interfacial dislocations has been observed for the first time by BEEM. Apart from the surface- and dislocation-induced contrast variations, the BEEM current is generally homogeneous.