Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.12, No.6, 3970-3974, 1994 DOI10.1116/1.587412 Export Citation Fabrication of 150-nm Gate-Length High-Electron-Mobility Transistors Using X-Ray-Lithography Haghirigosnet AM, Lafontaine H, Jin Y, Rousseaux F, Chaker M, Pepin H, Launois H Keywords:RESIST;PERFORMANCE Please enable JavaScript to view the comments powered by Disqus.
