Journal of Vacuum Science & Technology B, Vol.13, No.2, 214-226, 1995
Quantitative Chemical Topography of Polycrystalline Si Anisotropically Etched in Cl-2/O-2 High-Density Plasmas
Keywords:ELECTRON-CYCLOTRON RESONANCE;RAY PHOTOELECTRON-SPECTROSCOPY;POLYSILICON;FEATURES;TRIMETHYLGALLIUM;TRIETHYLGALLIUM;DECOMPOSITION;UNIFORMITY;GAAS(100);KINETICS