Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 227-234, 1995 DOI10.1116/1.588356 Export Citation Comparison of Damage and Si Oxidation-Kinetics Resulting from Electron-Cyclotron-Resonance and Distributed Electron-Cyclotron-Resonance Plasma Processing Hu YZ, Li M, Wang Y, Irene EA, Hugon MC, Varniere F, Jiang N, Froment M, Agius B Keywords:OXIDE-GROWTH;SILICON;ELLIPSOMETRY;TEMPERATURE;DEPOSITION;ARGON;BIAS Please enable JavaScript to view the comments powered by Disqus.
