Journal of Vacuum Science & Technology B, Vol.13, No.2, 685-688, 1995
Consequences of DX Centers on the Charge-Distribution of Double-Quantum-Well, Delta-Modulation-Doped Heterostructures
Keywords:FIELD-EFFECT TRANSISTORS;ALXGA1-XAS/GAAS HETEROSTRUCTURES;GAAS;SI;MIGRATION;SEMICONDUCTORS;PERFORMANCE;TEMPERATURE;RESOLUTION;VOLTAGE