p-type alloyed ohmic contacts of Au/Mn/Ni/Au have been fabricated for application to compound semiconductor devices. Extremely low resistance contacts to 3X10(19) cm(-3) Be-doped p-GaAs were achieved by electron-beam evaporation and rapid thermal annealing. Contacts were thermally stable, and the contact resistance remained below 0.04 Omega mm in the temperature range from 360 to 450 degrees C. Annealing at 400 degrees C for 40 s resulted in a minimum contact resistance of 0.012 Omega mm, corresponding to a specific resistivity of 1.6X10(-8) Omega cm(2), which is very close to the theoretical predictions. The mechanism of formation of Au/Mn ohmic contacts was discussed, based on Auger electron spectroscopy data.