Focused-ion-beam-induced deposition of a low resistivity Cu film has been produced using local heating of the substrate with a semiconductor laser. A spot of order 70 mu m diameter is irradiated using suitable optics to couple the 1.3 W, 977 nm laser radiation to the sample. The resistivity of the deposited Cu drops from 150-200 mu Ohm cm with no laser power to 3 mu Ohm cm at 1.2 W, when the temperature in the irradiated areas is 120 degrees C. The metal film deposits only where the ion beam is incident.