The spatial distribution of charge carriers in semiconducting conductive properties. In this report silicon cantilevers with integrated tips and coated with boron-doped chemical vapor deposited diamond have been used for the first time to establish electrically reliable point contacts on silicon. The relation between the applied force and the nanoindentation characteristics has been investigated in a range from 10 to 150 mu N. The threshold value necessary to pierce the native oxide layer has been obtained and is found to depend on the peculiar coating of each tip. The data are correlated with the current-voltage characteristics of the contacts. The impedance of point contacts on homogeneously doped p- and n-type silicon with known resistivity has been measured and calibration curves have been plotted for nanospreading resistance probe measurements. It is found that only above the threshold for plastic deformation can useful electrical characterizations be performed.