Strain-compensated InAsP/InGaP/InP multiquantum well lasers emitting at 1.3 mu m were grown by all solid source molecular beam epitaxy. A high characteristic temperature of 86 K was measured for temperatures between 20 and 120 degrees C for lasers with as-cleaved and high reflection coated facets. A low threshold current density of 115 A/cm(2) per well was obtained for lasers with a cavity length of 1600 mu m. Our results clearly demonstrate the suitability of a InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures and the potential of all solid source molecular beam epitaxy for growth of optoelectronic devices.