Secondary ion mass spectroscopy was used to study the short-term carbon doping memory effect in InGaAs lattice-matched to InP induced by using CBr4 in a solid-source molecular beam epitaxy system. Carbon incorporation efficiencies in (In,Ga)As grown at different substrate temperatures and under different group V/III flux ratios were also investigated. There is no observable carbon residual doping effect in (In,Ga)As layers grown immediately after a 1000-Angstrom-thick (In,Ga)As layer with a carbon doping density of up to 2 x 10(19) cm(-3). However, there is a small amount of transient residual carbon doping of less than 5 x 10(16) cm(-3) in the undoped (In,Ga)As grown immediately after a 1000-Angstrom-thick (In,Ga)As layer with a carbon doping density of about 5 x 10(19) cm(-3). A de current gain as high as 460 in carbon-doped (In,Al)As/(In,Ga)As Npn heterojunction bipolar transistors with an 800-Angstrom-thick base doped at 2 x 10(19) cm(-3) was achieved.