Very high p-type doping is achieved in Gap and InxGa1-xP with Be in solid source molecular beam epitaxy equipped with a valved phosphorus cracker. Dependence of hole concentration on the growth temperature and on the Be flux during growth is studied for Gap The hole concentration peaks at 3 x 10(19) cm(-3) for normal temperature (600 degrees C) growth. It is slightly higher at a lower growth temperature of 400 degrees C for the same Be flux. A higher hole concentration (5 x 10(19) cm(-3)) is obtained by giving a high temperature rapid thermal anneal to this sample. A hole concentration of 2 x 10(19) cm(-3) is achieved in In0.49Ga0.51P by using a lower temperature growth (350 degrees C). To our knowledge, this is the highest reported hole concentration for any p-type dopant in In0.49Ga0.51P.