In this work, InP/InGaAs single heterojunction bipolar transistors (SHBTs) with excellent performance were grown by solid-source molecular beam epitaxy using a phosphorus valved cracker. The maximum de and differential current gain are similar to 27 and 32 with breakdown voltages V(ceo)similar to 6 V and V(cbo)similar to 10 V for the SHBT with a 5000 Angstrom InGaAs collector layer doped at 4x10(16) cm(-3). The ideality factors for Ib and Ic are similar to 1.12 and 1.07 and the transistors also show very uniform current gain down to 10(-10) A range. For high frequency performance, the maximum f(T) and f(max) are around 80 and 125 GHz for the SHBT with an emitter area of 32 mu m(2).