Resistance uniformity of MoNx film resistors is necessary for stable operation of Josephson large scale integrated circuits. Electrical and crystallographic characteristics of MoNx films deposited by the sputtering method have been studied. We have found the resistivity of a MoNx film at 4.2 K depends on the current direction in the film plane. Scanning electron microscopy observations show crystal grains are elongated in the film plane. The shape of the Mo target and the configuration of the substrate influence longitudinal axes of most grains which tend to orient in the same direction. The resistivity of the MoNx film for a current parallel to the longitudinal directions of most grains is lower than that for a current perpendicular to the longitudinal directions. Therefore, the resistivity anisotropy of the MoNx films is mainly due to the anisotropy of the grain boundaries.