Journal of Vacuum Science & Technology B, Vol.14, No.6, 3489-3491, 1996
Ag2Te/As2S3 - A High-Contrast, Top-Surface Imaging Resist for 193 nm Lithography
At 193 nm, the Ag2Te/As2S3 inorganic resist system exhibits many of the characteristics previously observed at longer wavelengths, namely, a contrast of the order of 10 and the edge effect, both of which contribute to the printing of narrow linewidths. We have observed 0.3 micron Lines Limited by the resolution capability of the optical system and not by the resist. Under pulsed excimer laser excitation, this system exhibits a threshold of the order of 3 mJ/cm(2)/pulse. The system does not exhibit reciprocity. While images were printed with two 17 ns pulses of 4 mJ/cm(2)/pulse, images could not be printed with a single pulse as large as 50 mJ/cm(2)/pulse. This behavior is not explained by our previously developed model.