Journal of Vacuum Science & Technology B, Vol.14, No.6, 3555-3558, 1996
Quasi-Periodic Microfacets on the Surface of AlGaAs/GaAs Quantum-Well Structures Grown by Molecular-Beam Epitaxy on (311)A High-Index Substrates
Standard molecular beam epitaxy is used to demonstrate the growth feasibility and reproducibility on the formation of microfacet array on the top surface of higher-index (311)A quantum well structures. The quasiperiodic microfacet array was characterized by atomic force microscopy and was observed to be along the <[(2)over bar 33]> direction, whereas for the (100) reference sample the microscopic surface morphology presented the terraces formation. We have used photoluminescence to characterize the optical properties of the samples. The observed redshift of the luminescence from the (311)A sample, in relation to the (100) reference sample, was correlated with the existence of a lateral confinement potential induced by the period of faceting in this structure. The comparative analysis based on photoluminescence measurements have also shown the higher quality and the lower impurity incorporation for the (311)A oriented samples.