Metal based single electron transistors fabricated by the step edge cut off process will be presented. Although standard electron beam lithography, dry etching and lift-off techniques were used, devices with tunnel capacitances down to 1.5 aF are realized. They are characterized at different temperatures ranging from 50 mK up to 77 K. Transistor operation at 4.2 K is demonstrated. Traces of the Coulomb blockade are observed up to 77 K.