We propose a novel technique for reducing substrate reflections in 248 nm deep ultraviolet (DW) Lithography. The method we have developed utilizes a multilayer scheme comprised of layers of silicon rich oxide. Deposition of the film stack is carried out on a production ready PE-CVD tool in one continuous operation. The combining of multiple layers allows a gradual change in absorption thereby minimizing the reflection coefficient at the resist/ARC interface. The method of operation of these films is one of total absorption rather than the more common destructive interference method of a single layer film which relies on very tight thickness control. Absorption of the combined films is high enough to be effective on even the most highly reflective substrates such as aluminum. Furthermore, this technique does not require the ARC films to be tuned in their optical constants to accommodate the underlying substrate. We have successfully patterned wafers with feature sizes as small as 200 nm with no appreciable change in line width due to the underlying topography. The multilayer ARC system has been successfully integrated into the gate level of a 0.25 mu m design rule-device with excellent results. A description of the films used, their optical properties, and results from experimental data, as well as numerical simulations, will be reported.