Selective chemical vapor deposition of TiSi2 for contacts and interconnects in 0.25 mu m and below design rule devices has been performed from TiCl4/DCS/H-2 chemistry using an industrial integrated cluster tool. Selectivity on oxide and nitride and a resistivity of around 16 mu cm have been obtained. The growth rates obtained on doped/undoped, poly/mono Si are almost identical. The grain size on poly Si is around 0.10 mu m. Loading effect has been observed and corrected by the gas mixture. This chemical vapor deposition (CVD) technique has thus been used in a 0.25 mu m complementary metal-oxide-semiconductor technology and the results are compared with the standard salicide (solid phase reaction) and elevated source/drain/gate (with selective epitaxy) followed by the salicide, The results show that CVD is a most promising process for the 0.2 mu m technology with higher values for the transistor saturation current.