Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 Angstrom. The maximum current density of 800 mu A/cm(2) and the threshold voltage of 600 V were obtained from the diamond-tip held emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip held emitter array was not varied over a wide range of vacuum pressure relatively to the hat diamond film.