Technology for future integrated circuits will require advances in all facets of materials and processing. Low dielectric constant materials will require advances in electrical, thermal, and mechanical behavior before process integration can occur, The dielectric constant must be lower than that of amorphous silicon dioxide and possess the right properties for integration with future metallurgies such as copper. Several organic thermoset resins that were predicted to possess the necessary characteristics have been synthesized and studied. A thermoset copolymer of 1,3,5-tris(2-allyloxy-hexafluoro-2-propyl) benzene with polymethylhydrosiloxane oligomers was identified as a material worthy of further development. Thermal gravimetric analysis indicates relative stability up to 350 degrees C for short periods of time (30-60 min). The complex permittivity was measured up to 40 GHz and was found to be 2.40 with a loss tangent of 0.008. Compatibility with copper multilevel processing was determined by a secondary ion mass spectroscopy analysis. Copper ion migration did not occur. The processability of the dielectric resins was investigated to address the integration issues associated with the fabrication process.