화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.15, No.6, 1954-1960, 1997
Investigation of the proximity effect in amorphous AlF3 electron-beam resists
A proximity effect occurs when two features having a close proximity are exposed using conventional organic electron-beam resists, subsequently causing overexposure of the region between the two features and ultimate broadening of the features. In this study, we employ probes of a through-focal series to irradiate amorphous AlF3 (a-AlF3) inorganic films. A proximity effect of a very different nature is also observed while employing the a-AlF3 films as self-developing electron-beam resists. Such an effect distorts the closely spaced features and sets a limit on the proximity of those nanometer-scaled features. According to the results of electron microscopy obtained while examining the peculiar behavior of the proximity effect, mass-transport phenomena are critical in the damaging behavior of the a-AlF3 films. Besides, our results presented herein demonstrated the ability of the through-focal probes to produce aluminum nanostructures of varying sizes in thin films containing a-AlF3 self-developing resists.