Low activation energy resists are studied through two formulations representative of these systems, namely, Shipley 248 nm XP9493 and MCC 193 nm TER-1 resists. It is shown that their specific behavior can be easily demonstrated by using differential scanning calorimetry techniques at different steps of the lithographic process. As these resists present a low activation energy for their deprotection, the postexposure bake (PEB) is not necessary so a comparison between processes with and without a PEB step can be made. Processes without PEB are interesting as they allow deconvolution and an emphasis on different phenomena (evaporation, diffusion, and recompaction) which are of tremendous importance for chemically amplified resists. Finally, processes without FEB can allow a correlation of the mechanisms involved in the resists to lithographic performance.