This article reports work on two positive-tone deep ultraviolet chemically amplified resist (CAR) systems from HOECHST AG that were applied in two different lithographic processes : (i) the AZ DX-561 resist in serial working direct-write scanning electron-beam lithography, and (ii) AZ DX-1300P resist in a novel parallel working masked ion beam lithography. The main parameters of both CARs under the optimized processing conditions for both lithographic processes were generally determined. The contrast of these resists was found to be > 10. The sensitivity of AZ DX-561 was about 12 mu C/cm(2) for 30 keV electrons, For AZ DX-1300P, a sensitivity of 9 mu C/cm(2) was found for 30 keV electrons and 0.3 mu C/cm(2) for 80 keV He+ ions. Both resists showed excellent performance for subsequent reactive ion etching.