Dry etching and consequent burring regrowth using an in situ ultrahigh vacuum multichamber system were investigated for nanometer-size fine patterns. Narrow stripe patterns with width variations from 30 to 5000 nm were fabricated on GaAs/AlGaAs single quantum wells using electron-beam lithography. The wafer was then etched and regrown in an in situ multichamber system. Using this in situ process along with a H-plasma treatment before regrowth, the surface nonradiative recombination velocity was able to be greatly reduced to 6.8 x 10(4) cm(-1) from that of as-etched wafers (1.9 x 10(5) cm(-1)) estimated by measuring time-resolved photoluminescence (PL). Also, the size dependence of the PL intensity was able to be greatly improved to a degree that exceeded the InGaAs/InP wafers.