The conductivity and Hall coefficient of polycrystalline SiC films deposited on quartz are studied in the temperature ranges of 13-1275 K and 17-800 K, respectively. Since conductivities were monotonically increasing with the increasing temperature, these films can be used as thermistors over the entire temperature range, While Hall mobility shows a weak temperature dependence, the electron concentration, as computed from n=1/qR(H), increases exponentially with temperature from 10(19) to 4x10(20) cm(-3). Three well-separated activation energies, computed from the measured conductivity and Hall concentration, are in the ranges of 0.4-3.8 meV, 7-20 meV, and 55.5 +/-5 meV. Due to high electron concentration measured at temperatures as low as 17 It, impurity/defect related conduction or thermally activated hopping may be dominant at low temperatures.