Journal of Vacuum Science & Technology B, Vol.16, No.1, 253-254, 1998
Reactive ion etching of CHF3+BCl3 for ternary InxAl1-xAs and InxGa1-xAs (x = 0.18, 0.3, 0.52) compounds using various in contents
CHF3+BCl3 reactive ion etching etching was used to study the etching of InxGa1-xAs and InxAl1-xAs layers with varied In contents (x = 0.18, 0.3, 0.52). By adding CHF3 gas, it is possible to effectively reduce the etching rate of InxAl1-xAs without any influence on the InxGa1-xAs. The etching rate of InxGa1-xAs decreased with the In content; however, InxAl1-xAs showed the opposite trend. The etching selectivity between the InxGa1-xAs and the InxAl1-xAs layers was increased by reducing the In content.