Low-energy boron implantations between 100 eV and 10 keV are characterized using secondary ion mass spectrometry and electrical measurements of sheet carrier concentrations and sheet resistance, Factors that may limit the use elf ion implantation for future generations of semiconductor devices are discussed, At 1 keV various tilt angles show identical channeling behavior, and only a slight difference with an amorphous implant. It is found that as the energy is lowered from 1 keV to 100 eV much of the reduction in profile depth is canceled out by transient enhanced diffusion during a rapid thermal anneal, Hall-van der Pauw measurements show that with lower implant energy it becomes more difficult to activate the implanted dose. This is possibly due to Increased clustering of boron, but more likely due to the fact that the surface starts to act as a trapping and deactivation center for B.