Journal of Vacuum Science & Technology B, Vol.16, No.3, 1507-1510, 1998
Reflection high-energy electron diffraction during substrate rotation : A new dimension for in situ characterization
We present two methods to access reciprocal space with reflection high-energy electron diffraction (RHEED) during substrate rotation. The extraction of an arbitrary number of still frames from a continuously changing RHEED pattern is realized by triggering the substrate rotation and it allows analysis of quasistatic RHEED patterns that are updated every revolution. At the same time, the intensity along a line parallel to the shadow edge can be used to reconstruct a planar cut through the reciprocal lattice similar to a low-energy electron diffraction pattern. This RHEED pattern directly reveals the symmetry of the surface reconstruction and its changes during the deposition process.
Keywords:GROWN GAAS(001)-2X4 SURFACES;MOLECULAR-BEAM EPITAXY;RHEED PATTERNS;QUANTITATIVE-ANALYSES;MBE;OSCILLATIONS;GAAS