Structure and targets of the European MEDEA project on ion projection lithography as well as related U.S./European cooperation are explained. By assuming 10 mu m virtual source size and 1 eV (full width half maximum) energy spread calculations for a multielectrode electrostatic ion-optical system (1.25 m between ion source and stencil mask, approximate to 1.8 m between mask and wafer) we realize the possibility of 100 nm resolution (line and space) over an exposure field of 22 x 22 mm(2) even when using the MONTEC model for calculating the stochastic blur and when running 3.3 mu A He+ ion beam current through the ion-optical column, thus more than twice exceeding target specifications. Thus, for 100 nm resolution and 50% pattern density the raw throughput is approximate to 12 cm(2)/s corresponding to >75 WPH (pattern within 80% of 300 mm wafer area).