We present a suite of electron beam proximity effect correction algorithms which incorporate elements of various shape-to-shape techniques as well as field-based techniques. They are applied to a set of prototypical pattern data at simulated electron beam exposure conditions ranging from 25 to 100 keV on bulk substrates. The results are compared in terms of correction accuracy and computational efficiency. In addition, we show how these algorithms, when used in combination with one another, can be applied to hierarchical pattern design data such that the correction can be obtained with a high degree of accuracy without requiring unnesting of the hierarchy.