A sequence of running a short plasma clean followed by an optimized chamber conditioning and finally chemical vapor deposition (CVD) TiN deposition has been developed that minimizes contamination particles, wafer to wafer uniformity, and wet clean downtime on a five station CVD TiN tool. This run sequence simultaneously maintains high yield and throughput, and it has been demonstrated over a 1500 wafer marathon. This sequence of short cleans, conditioning and depositions offers considerable advantages over the accepted sequence of a long clean, long conditioning, and extended wafer running. Following a clean, a 70% reduction in deposition rate ramp and thickness non-uniformity has been demonstrated.