Microbridge materials optimized for room temperature infrared microbolometers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). Thin films were deposited from tetramethyldisiloxane (TMDS) and oxygen. They have a 4 x lower thermal conductivity than that of Si3N4 and an inherent absorption coefficient (8-12 mu m range) approximately half that of nitride, The PECVD films deposited from TMDS are compatible with current complementary metal-oxide-semiconductor processing and have been shown to have adequate mechanical strength for use as microbolometer membranes.