The effect of the transient-enhanced outdiffusion of P, As, and Sb from ion-doped silicon layers on the diffusion of the impurity into the specimen bulk during rapid electron-beam annealing has been studied. For specimens doped with P+ and As+ ions, it has been established that the average coefficient of diffusion of the impurity into the bullet under the condition of transient-enhanced outdiffusion is a fraction of that in a case where no evaporation of the impurity takes place. For specimens doped with Sb+ ions, no diffusion of antimony into the bulk of silicon under the condition of evaporation of the impurity has been revealed, but, on the contrary, a decrease in the depth of position of the impurity has been detected. The data obtained indicate that the evaporation of the impurity, in particular, its transient-enhanced outdiffusion occurring early in the process of rapid thermal annealing, slows down the diffusion of the impurity into the bulk of silicon. The possibility of harnessing this effect for the production of supershallow-doped layers is discussed.