Process integration and in-line metrology are now the key agenda items for formation of ultrashallow junctions for ultralarge scale integration devices. Integration of the complete process sequence from selection of the device layer material through introduction and activation of dopants involves dozens of interacting decisions. This article highlights some issues associated with the control of channeling, damage annealing of preamorphized and molecular ion implants, outgassing of oxygen from product wafers during rapid thermal processing cycles and conditions for control of beam divergence and doping microuniformity near gate stack structures.