Quantification at the surface or in the near-surface region has been difficult to achieve for analytical techniques such as secondary ion mass spectrometry (SIMS) and total reflection x-ray fluorescence (TXRF). Ion implantation through a removable layer with energy selected to place the peak of the implant at the interface between the layer and the substrate can provide a known concentration of any element at the interface. When the layer is removed, the surface and near-surface regions of the substrate have known concentrations of the element of interest. Changes in the dose of the ion implant can be used to vary the concentration at the surface. Surface roughness after the oxide has been removed has been considered and does not appear to be significant. Earlier studies of implants into oxide provided the data required to determine the implant energy. Standards have been created for boron, phosphorus, arsenic, and nitrogen. Initial studies have also been made for magnesium, aluminum, calcium, iron, nickel, and copper. Applications have been made for SIMS ultrashallow analyses, surface SIMS, time-of-flight (TOF)-SIMS, and TXRF. Usage of this method for Auger electron spectroscopy and x-ray photoelectron spectroscopy quantification should also be viable.