Scanning spreading resistance microscopy (SSRM) is used to determine the complete two-dimensional carrier profile of fully processed 0.29 mu m p- and n-type metal-oxidesemiconductor field-effect transistors with various source/drain implants. A comparison is made between the quantified profiles determined using SSRM and the profiles extracted from the electrical device characteristics using an inverse modeling technique. This comparison includes source/drain and well implants, epilayers, and field implants. The data are compared in terms of depth precision and carrier-concentration accuracy and show a good agreement. This article also addresses the limitations and possible artifacts of both methods.