This article demonstrates the capabilities of a new noncontact optical technique for measuring active doping depth of shallow implants. Employing a 2 mu m spot size, it provides a East, nondestructive measurement in dimensions approaching those of individual devices. The method can be used to map micron- and wafer-scale regions, and does not require an edge exclusion zone. Data are presented showing performance on layers varying in depth from 200 to 1200 Angstrom using rapid thermal annealing activated low-energy B-11 implants. Center-to-edge diameter scans on 200 mm wafers are presented. In many cases these show edge effects in the outermost centimeter, indicating the importance of minimizing the edge exclusion zone. Measurements are validated through correlation to spreading resistance profiles, and show a depth resolution of better than 3 Angstrom.