The Cu/TiB2/TiSi2/Si system has been examined as a potential Schottky barrier contact suitable for very large scale integration circuits in silicon technology. The current-voltage characteristics of diodes based on the above system were studied and the effect of postsilicidation heat treatment on the barrier height and the ideality factor was evaluated. The Schottky barrier height and the ideality factor at a temperature interval of 300-973 K were in the range of 0.65-0.68 V and 1.03-1.08, respectively.