Phosphorous based gas source molecular beam epitaxy for the production application of growing millimeter wave Gunn diode structures on sulfur doped indium phosphide substrates for automotive forward looking radar applications is described. Procedures for obtaining silicon doping control in the 10(15) range are outlined. Hall mobility and low temperature photoluminescence results comparable to the best results obtained using metal-organic molecular beam epitaxy and metal-organic chemical vapor deposition are reported. Process control and repeatability are discussed. 77 GHz Gunn diode radio-frequency performance results are reported.