InAs/AlSb high electron mobility transistors (HEMTs) and resonant interband tunneling diodes (RTTDs) with AlSb barriers and GaSb wells were grown in a single heterostructure by molecular beam epitaxy. The resulting HEMTs exhibit excellent de and microwave performance at low drain voltages, with an intrinsic unity-current-gain cutoff frequency of 220 GHz. The RITD performance is comparable to RITDs grown directly on InAs substrates, with peak current densities above 10(4) A/cm(2) and peak-to-valley ratios near 11 for 15 Angstrom AlSb barriers. The results represent an important step toward the fabrication of high-speed, low-power logic circuits in this material system.