A constant density (rho = 1) constant temperature molecular dynamics method with periodic boundary conditions is utilized to examine the melting transition for argon impurity patches embedded in krypton monolayer matrixes las well as for the complement system) deposited onto graphite for various values of argon impurity fraction X. The character and temperature T-m of melting are found to be dependent on the impurity fraction as well as adsorbate topology vis-a-vis which species is the patch impurity and which is the matrix. No phase separation is observed, as the melting temperature of the matrix is coincident with that of the patch in all cases examined. Much of the behavior exhibited by the system in this study can be understood by vacancy formation arguments.