화학공학소재연구정보센터
Langmuir, Vol.16, No.13, 5665-5672, 2000
Surface morphology/composition and photoelectrochemical behavior of metal-semiconductor composite films
Scanning electron microscopy was used to study the morphology of metal-TiO2 composite films prepared for photoelectrochemical applications. These films consisted of electrodeposited Ni, Cu, Ag, or In with TiO2 (Degussa P-25) particles occluded in them. In the case of Ni-TiO2 composites, co-clusters of nickel and TiO2 were observed superimposed on the "flat" regions of the film containing only nickel. This co-cluster formation facilitated efficient separation of photogenerated electron-hole pairs in the TiO2 component. On the other hand, the distribution of TiO2 on the indium film surface was such that electron-hole pair recombination resulted on photoexcitation of TiO2. Whereas Cu-TiO2 composite films exhibited n-type photoelectrochemical behavior in pH 7 sulfite medium, p-type activity resulted when the photovoltammetry experiment was repeated in 0.1 M NaOH. This behavior was attributed to Cu2O formed in situ in the Cu-TiO2 composite film.