A one step firing process was used in preparing PZT(53/47) thick films to prevent the film cracking. Films with a single layer thickness over 0.6 mum have been prepared. XRD and SEM studies were carried out to verify the crystal growth mechanism in the firing process. The microstructures, crystallinity, ferroelectric and dielectric properties of the films were compared with those of the films prepared by the conventional sol-gel firing process. The influences of lead excess and film thickness on the film properties were also studied.