화학공학소재연구정보센터
Macromolecules, Vol.30, No.21, 6592-6596, 1997
Crystallization of Syndiotactic Polystyrene in Beta-Form .3. Energetic Analysis of the Incorporation Mechanism of Stacking-Faults into the Crystal
Crystallization-temperature (T-c) dependence of the probability of the presence of stacking faults, p, in the solution-grown beta-form single crystal of syndiotactic polystyrene (s-PS) was analyzed on the basis of the growth theory of the polymer crystal. By comparing the experimentally obtained T-c dependence of p with the theoretical one, it is deduced that the relative energy difference, Delta E/Delta h(f), between the regular and the faulted structures of s-PS decreases linearly with increasing T-c : Here, (Delta h(f)-Delta E) and Delta h(f) mean the heat of fusion for the faulted structures and that for the regular one, respectively. This result leads to an expectation that the faulted structure will be dominant when T-c is above a certain critical temperature. Such a fault-rich crystal is to give the hk0-diffraction pattern, in which the reflections with h + k = odd are absent. This feature has been really found in the X-ray diffraction pattern from the beta’-form crystal by De Rosa et al.