Crystallization in vacuum evaporated amorphous Sb2S3 films induced by a continuous wave argon laser is studied systematically as a function of laser power, irradiation time, film thickness etc. Results show that the observed amorphous-to-crystalline transformation is irreversible and is mainly due to the thermal process during the laser interaction. The threshold laser power density required to induce crystallization is found to be 98 +/- 5 W/cm(2). Analyses indicate Sb2S3 films as a potential material for WORM kind of storage applications.