A method is described for growth of single crystals of NiSe2, from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace. The electrical and magnetic properties of the crystals are briefly described; no prior measurements of resistivity have. been reported below room temperature. A theoretical analysis shows that NiS1.93 is a metal exhibiting weak correlation effects.