Polymer Bulletin, Vol.32, No.1, 55-62, 1994
Synthesis of Poly(4-(bis(Trimethylstannyl)Methyl)Styrene) and Its Properties for Electron-Beam Resist
To create high performance resist materials, synthesis of novel organostannun-containing polymer was investigated. 4-[Bis(trimethylstannyl)methyl] styrene (BSnMS) was synthesized by a reaction between trimethylstannyl chloride and 4-vinylbenzyllithium that was prepared through a metalation reaction of 4-methylstyrene by lithium diisopropylamide. Radical polymerization of BSnMS proceeded smoothly to give a polymer. Glass transition temperature of poly(BSnMS) (Tg=140 degrees C) was fairly high among polystyrene homologues. Poly(BSnMS) thus obtained showed naga-working properties toward EB exposure. Sensitivity of the poly(BSnMS) was 9.0 similar to 9.6 mC cm(-2), keeping high gamma-value (3.2 similar to 4.9).