PE-CVD process, using electric discharges at ambient pressure stabilized with dielectric barrier, was applied to the thin film deposition into the surfaces of solid substrates at laboratory scale. Polycondensation of tetraethoxysilane (TEOS) in the mixtures TEOS + He, TEOS + Ar and TEOS + Ar + O-2 yielded uniform, pinhole-free films of thickness ranging from 10 to 600 nm composed mainly of silicon dioxide and organic admixtures. Films were stable, smooth, and well adhering to the substrate.