In this paper the reverse current-voltage characteristics of a heterojunction based on spray deposited indium tin oxide (ITO)-p CdTe is presented. Particular reference is made to the study of the characteristics within the temperature intervals 120-370 K. It is established that, the reverse current-voltage characteristics have two distinct regions along the curves with the applied Voltage having a strong power dependence on the reverse current at lower temperatures (I-rev similar to U-m). At higher temperatures however, the reverse current is directly proportional to the applied voltage (I-rev similar to U). Also, a possible energy band diagram to explain the current flow mechanism suggested for the reverse current in the structure is presented.