Boron doped p-type hydrogenated microcrystalline silicon (mu c-Si:H) films have been prepared by radio-frequency glow discharge method. Highly conductive p-type mu c-Si:H films can be obtained even with lower concentration of hydrogen in the rf glow discharge plasma if chamber pressure is low. Effects of increase in hydrogen (H-2) flow rate and chamber pressure have been studied. The structural properties of the films have been studied by X-ray diffractometry. The electrical and optical characterization have been done by dark conductivity, Hall measurements and optical absorption measurements respectively. Film with conductivity 0.1(Omega-cm)(-1) with band gap 2.1 eV has been obtained.